Mossbauer spectroscopy of Fe in silicon with the novel laser-ionized 57Mn+ ion beam at ISOLDE

被引：22
|
作者：
Weyer, G [1 ]
Degroote, S
Fanciulli, M
Fedoseyev, VN
Langouche, G
Mishin, VI
Van Bavel, AM
Vantomme, A
机构：
[1] CERN, Div PPE, CH-1211 Geneva 23, Switzerland
[2] Katholieke Univ Leuven, Inst Nucl & Radiat Phys, B-3001 Louvain, Belgium
[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark
[4] Russian Acad Sci, Inst Spect, Troitsk 142092, Russia
来源：
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词：
Mossbauer spectroscopy; silicon; deep-level impurities; Fe impurities in silicon;
D O I：
10.4028/www.scientific.net/MSF.258-263.437
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Radioactive Mn-57(+) ions have been implanted at the ISOLDE facility into variously doped silicon single crystals to study the lattice location and electronic configuration of Fe-57 daughter atoms by Fe-57 Mossbauer emission spectroscopy. Two single lines in the spectra are assigned to substitutional Fe-s and interstitiaI Fe-i, respectively. The isomer shift, i.e. electron density, for Fe-i has been found to depend on the doping of the crystals, this is attributed to the 0/+ band gap state of Fe-i. A model for the creation of both Fe-s and Fe-i in different charge states by the beta(-)-decay of ion implanted Mn-57 is proposed.
引用
收藏
页码：437 / 442
页数：6
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