Mossbauer spectroscopy of Fe in silicon with the novel laser-ionized 57Mn+ ion beam at ISOLDE

被引：22

作者：

Weyer, G ^{[1
]}

Degroote, S

Fanciulli, M

Fedoseyev, VN

Langouche, G

Mishin, VI

Van Bavel, AM

Vantomme, A

机构：

[1] CERN, Div PPE, CH-1211 Geneva 23, Switzerland

[2] Katholieke Univ Leuven, Inst Nucl & Radiat Phys, B-3001 Louvain, Belgium

[3] Aarhus Univ, Inst Phys & Astron, DK-8000 Aarhus C, Denmark

[4] Russian Acad Sci, Inst Spect, Troitsk 142092, Russia

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

Mossbauer spectroscopy; silicon; deep-level impurities; Fe impurities in silicon;

D O I：

10.4028/www.scientific.net/MSF.258-263.437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radioactive Mn-57(+) ions have been implanted at the ISOLDE facility into variously doped silicon single crystals to study the lattice location and electronic configuration of Fe-57 daughter atoms by Fe-57 Mossbauer emission spectroscopy. Two single lines in the spectra are assigned to substitutional Fe-s and interstitiaI Fe-i, respectively. The isomer shift, i.e. electron density, for Fe-i has been found to depend on the doping of the crystals, this is attributed to the 0/+ band gap state of Fe-i. A model for the creation of both Fe-s and Fe-i in different charge states by the beta(-)-decay of ion implanted Mn-57 is proposed.

引用

页码：437 / 442

页数：6

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