Dynamic power supply current testing of CMOS SRAMs

被引:5
|
作者
Liu, J [1 ]
Makki, RZ
Kayssi, A
机构
[1] Fujitsu Microelect Inc, San Jose, CA 95134 USA
[2] Univ N Carolina, Charlotte, NC 28223 USA
[3] Amer Univ Beirut, Beirut, Lebanon
基金
美国国家科学基金会;
关键词
transient power supply current (i(DDT)); transient current sensor; disturb fault; CMOS SRAM;
D O I
10.1023/A:1008324900917
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the design and implementation of a dynamic power supply current sensor which is used to detect SRAM faults such as disturb faults as well as logic cell faults. A formal study is presented to assess the parameters that influence the sensor design. The sensor detects faults by detecting abnormal levels of the power supply current. The sensor is embedded in the SRAM and offers on-chip detectability of faults. The sensor detects abnormal dynamic current levels that result from circuit defects. If two or more memory cells erroneously switch as a result of a write or read operation, the level of the dynamic power supply current is elevated. The sensor can detect this elevated value of the dynamic current. The dynamic power supply current sensor can supplement the observability associated with any test algorithm by using the sensor as a substitute for the read operations. This significantly reduces the test length and the additional observability enhances defect coverages.
引用
收藏
页码:499 / 511
页数:13
相关论文
共 50 条
  • [41] An On-chip Dynamic Supply Current Monitor for Testing of Digital Circuits
    Gyepes, Gabor
    Arbet, Daniel
    Brenkus, Juraj
    Stopjakova, Viera
    Mihalov, Jozef
    2013 23RD INTERNATIONAL CONFERENCE RADIOELEKTRONIKA (RADIOELEKTRONIKA), 2013, : 156 - 161
  • [42] Dynamic supply current testing of analog circuits using wavelet transform
    Bhunia, S
    Roy, K
    20TH IEEE VLSI TEST SYMPOSIUM, PROCEEDINGS, 2002, : 302 - 307
  • [43] Transient current testing of dynamic CMOS circuits in the presence of leakage and process variation
    Chehab, A
    Kayssi, A
    Nazer, A
    Aaraj, N
    16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, 2004, : 381 - 387
  • [44] BUILT-IN DYNAMIC CURRENT SENSOR CIRCUIT FOR DIGITAL VLSI CMOS TESTING
    SEGURA, J
    ROCA, M
    MATEO, D
    RUBIO, A
    ELECTRONICS LETTERS, 1994, 30 (20) : 1668 - 1669
  • [45] Delay Time and Power Supply Current Characteristics of CMOS Inverter Broken by Intentional High Power Microwave
    Hwang, Sun-Mook
    Hong, Joo-Il
    Han, Seung-Moon
    Huh, Chang-Su
    Huh, Uk-Youl
    Choi, Jin-Soo
    2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2007, : 707 - +
  • [46] High-efficiency dynamic supply CMOS audio power amplifier for low-power applications
    Gubelmann, J.
    Dal Fabbro, P. A.
    Pastre, M.
    Kayal, M.
    MICROELECTRONICS JOURNAL, 2009, 40 (08) : 1175 - 1183
  • [47] Supply Voltage Dependence of Heavy Ion Induced SEEs on 65 nm CMOS Bulk SRAMs
    Wu, Qiong
    Li, Yuanqing
    Chen, Li
    He, Anlin
    Guo, Gang
    Baeg, Sang H.
    Wang, Haibin
    Liu, Rui
    Li, Lixiang
    Wen, Shi-Jie
    Wong, Richard
    Allman, Sidney
    Fung, Rita
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) : 1898 - 1904
  • [48] Critical Charge Dependency of Single Event Upset (SEU) on the Supply Voltage in Nanometric CMOS SRAMs
    Soleimaninia, Masume
    Raisali, Gholamreza
    Moslehi, Amir
    2022 IRANIAN INTERNATIONAL CONFERENCE ON MICROELECTRONICS, IICM, 2022, : 48 - 52
  • [49] A novel fully adjustable cmos current Schmitt trigger with a 1.5 V power supply
    Palumbo, G
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 1998, 26 (03) : 323 - 327
  • [50] HIERARCHICAL ARCHITECTURE FOR FAST CMOS SRAMS
    SCHMITTLANDSIEDEL, D
    NEUENDORF, G
    HOPPE, B
    MATTAUSCH, HJ
    VLSI AND COMPUTER PERIPHERALS: VLSI AND MICROELECTRONIC APPLICATIONS IN INTELLIGENT PERIPHERALS AND THEIR INTERCONNECTION NETWORKS, 1989, : A32 - A34