Influence of traps on transient electric field and mobility evaluation in organic field-effect transistors

被引：25

作者：

Manaka, Takaaki ^{[1
]}

Liu, Fei ^{[2
]}

Weis, Martin ^{[1
]}

Iwamoto, Mitsumasa ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tsinghua Univ, Ctr Adv Study, Beijing 100084, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 04期

关键词：

carrier density; hole mobility; optical harmonic generation; organic field effect transistors; organic semiconductors; polymers; silicon compounds; THIN-FILM TRANSISTORS; 2ND-HARMONIC GENERATION; PERFORMANCE; DEVICE; SEMICONDUCTORS; ELECTRONICS; DIELECTRICS; MORPHOLOGY; TRANSPORT; CIRCUITS;

D O I：

10.1063/1.3285503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A significant difference between the transient electric field profiles of the pentacene organic field-effect transistors (OFETs) with SiO(2) and poly(methyl-methacrylate) (PMMA) insulators was found by the time-resolved microscopic optical second-harmonic generation (TRM-SHG) experiment. The profile of former device was broad and changed smoothly, while the latter one had a sharp peak. Particularly, the peak of the transient electric field in SiO(2)-insulated devices moved much faster than that in the PMMA-insulated one. Based on several experimental evidences and computational simulations, we proposed that these differences might arise from a higher trapped carrier density in the conductive channel on the PMMA insulator. Simple approaches were developed to evaluate the trap density and define dynamic carrier mobility in terms of the transient electric field measured by the TRM-SHG technique. This mobility quantitatively depicts that the transient hole transport in the OFET with the PMMA insulator is trap controlled.

引用

页数：7

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