Magnetic tunnel junctions with large tunneling magnetoresistance and small saturation fields

被引：11

作者：

Egelhoff, W. F., Jr. ^{[1
]}

Hoink, V. E. ^{[1
]}

Lau, J. W. ^{[1
]}

Shen, W. F. ^{[2
,3
]}

Schrag, B. D. ^{[2
,3
]}

Xiao, G. ^{[2
,3
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Micro Magnet Inc, Fall River, MA 02720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 09期

基金：

美国国家科学基金会;

关键词：

SENSORS;

D O I：

10.1063/1.3358609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

There is a continuing need for greater sensitivity in magnetic tunnel junction (MTJ) sensors. We have found a new approach to achieving large tunneling magnetoresistance (TMR) with a very soft free layer. The high TMR is achieved by conventional means of annealing a bottom pinned MTJ that has Ta and Ru capping layers. The soft free layer is achieved by etching almost to the MgO tunnel barrier and depositing a thick soft magnetic film. The results are far superior to annealing the MTJ with the thick soft layer already deposited. (C) 2010 American Institute of Physics. [doi:10.1063/1.3358609]

引用

页数：2

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