Electrical, photoluminescence and optical investigation of ZnO nanoparticles sintered at different temperatures

被引:18
|
作者
Sedky, A. [1 ,3 ]
Ali, Atif Mossad [2 ]
Somaily, H. H. [2 ]
Algarni, H. [2 ]
机构
[1] Assiut Univ, Fac Sci, Phys Dept, Assiut 71526, Egypt
[2] King Khalid Univ, Fac Sci, Phys Dept, Abha, Saudi Arabia
[3] Sphinx Univ, Assiut, Egypt
关键词
ZnO synthesis; XRD and TEM; Breakdown field; Dielectric loss and Optical gap; ZINC-OXIDE FILMS; THIN-FILMS; PHOTOCATALYTIC ACTIVITY; ANNEALING TEMPERATURE; SUBSTRATE-TEMPERATURE; INTRINSIC DEFECTS; PARAMETERS; VARISTOR; CONDUCTION; DEPENDENCE;
D O I
10.1007/s11082-021-02849-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report here structural, electrical, photoluminescence (PL), and optical investigations of ZnO nanoparticles. The ZnO samples are initially sintered at various temperatures (T-s) (600-1200 degrees C) temperatures and their size is reduced twice to nanoscale by using ball friction at 200 rpm rotational speed and 30 min duration. It is found that the T-s do not influence the well-known peaks associated with the ZnO hexagonal structure, whereas the constants of the lattice and the average crystallite diameters are affected. Although the nonlinear area is observed for all samples in the I-V curves, the breakdown field E-B and nonlinear coefficient beta are moved to lower values as T-s increases, while the residual voltage K-r and nonlinear conductivity (sigma(2)) are increased. The empirical relations for K-r, E-B, and beta as a function of T-s are; K-r = 0.004 T-s - 0.487, E-B = - 1.786 T-s + 2559.5 and beta = - 0.052 T-s + 75.19. On the other hand, a maximum UV absorption shift (A(max)) is obtained at 412 nm, 400 nm, 384 nm, and 326 nm as the T-s increases up to 1200 degrees C. For each sample, two different energy band gap values are obtained; the first is called the basic bandgap (E-gh) and its value above 3 eV, while the second is called the optical band gap (E-gL), and its value below 2.1 eV. Moreover, the empirical relations of them are E-gh = 0.002 T-s - 0.24, E-gl = - 0.0033 T-s + 5.242 and increment E =- 0.0015 T-s + 5.002. Furthermore, the values of (N/m*) and lattice dielectric constant epsilon(L) are increased by increasing T-s up to 1200 degrees C, while the vice is versa for the interatomic distance R. The dielectric loss tan delta is almost linear above 4 eV for all samples, and it decreases sharply as the T-s increases. The optical and electrical conductivities sigma(opt) and sigma(ele) are decreased as the T-s increases up to 1200 degrees C. Finally, the characteristic of UV band edges against the optimum value of PL intensity for the samples shows 8-continuous peaks. Furthermore, the PL intensity of the peaks is decreased by increasing T-s and also by shifting the UV wave number towards the IR region.
引用
收藏
页数:21
相关论文
共 50 条
  • [41] Structural, optical, photoluminescence and photocatalytic assessment of Sr-doped ZnO nanoparticles
    Raj, K. Pradeev
    Sadaiyandi, K.
    Kennedy, A.
    Thamizselvi, R.
    MATERIALS CHEMISTRY AND PHYSICS, 2016, 183 : 24 - 36
  • [42] Effect of Ni doping on electrical, photoluminescence and magnetic behavior of Cu doped ZnO nanoparticles
    Ashokkumar, M.
    Muthukumaran, S.
    JOURNAL OF LUMINESCENCE, 2015, 162 : 97 - 103
  • [43] Investigation of morphology and photoluminescence of hydrothermally grown ZnO nanorods on substrates pre-coated with ZnO nanoparticles
    Tay, C. B.
    Chua, S. J.
    Loh, K. P.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (05) : 1278 - 1284
  • [44] An Investigation on Structural, Electrical and Optical properties of GO/ZnO Nanocomposite
    Mututu, Virginia
    Sunitha, A. K.
    Thomas, Riya
    Pandey, Mayank
    Manoj, B.
    INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2019, 14 (04): : 3752 - 3763
  • [45] INVESTIGATION OF ELECTRICAL AND OPTICAL PROPERTIES OF SYNTHETIC SAPPHIRE AT HIGH TEMPERATURES
    STULOVA, GM
    SHALABUT.YK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 996 - &
  • [46] Annealing effects on photoluminescence of ZnO nanoparticles
    Babu, K. Sowri
    Reddy, A. Ramachandra
    Sujatha, Ch.
    Reddy, K. V. G.
    Mallika, A. N.
    MATERIALS LETTERS, 2013, 110 : 10 - 12
  • [47] Synthesis and photoluminescence characterization of ZnO nanoparticles
    Raoufi, Davood
    JOURNAL OF LUMINESCENCE, 2013, 134 : 213 - 219
  • [48] Photoluminescence and photoconducting properties of ZnO nanoparticles
    Bhat, S. Venkataprasad
    Vivekchand, S. R. C.
    Govindaraj, A.
    Rao, C. N. R.
    SOLID STATE COMMUNICATIONS, 2009, 149 (13-14) : 510 - 514
  • [49] Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures
    Tokumoto, MS
    Smith, A
    Santilli, CV
    Pulcinelli, SH
    Craievich, AF
    Elkaim, E
    Traverse, A
    Briois, V
    THIN SOLID FILMS, 2002, 416 (1-2) : 284 - 293
  • [50] Investigation on structural, optical, and electrical properties for sintered Mg–Zn aluminate systems
    C. Jagadeeshwaran
    R. Murugaraj
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 6744 - 6754