Structural electrical and optical properties of undoped and indium doped ZnO thin films prepared by the pyrosol process at different temperatures

被引：61
|
作者：
Tokumoto, MS
Smith, A
Santilli, CV
Pulcinelli, SH
Craievich, AF
Elkaim, E
Traverse, A
Briois, V
机构：
[1] UNESP, Inst Quim, BR-14800970 Araraquara, SP, Brazil
[2] ENSCI, GEMH, F-87065 Limoges, France
[3] USP, Inst Fis, BR-13083970 Sao Paulo, SP, Brazil
[4] UPS, LURE, F-91898 Orsay, France
来源：
THIN SOLID FILMS | 2002年 / 416卷 / 1-2期
基金：
巴西圣保罗研究基金会;
关键词：
electrical properties; nanostructures; optical coatings; zinc oxide;
D O I：
10.1016/S0040-6090(02)00531-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The influence of the substrate temperature on the structural features and opto-electrical properties of undoped and indium-doped ZnO thin films deposited by pyrosol process was investigated. The addition of indium induces a drastic decrease (by a factor approximate to 10(10) for samples deposited at 300 degreesC) in the electrical resistivity of films, the lowest electrical resistivity (6 mOmega-cm) being observed for the film deposited at 450 degreesC. Films are highly transparent (>80%) in the Vis-NIR ranges, and the optical band gap exhibits a blue shift (from 3.29 to 3.33 eV) for the In-doped films deposited at increasing temperature. Preferential orientation of the ZnO crystallites with the c-axis perpendicular to the substrate surface and an anisotropic morphology of the nanoporous structure was observed for films growth at 300 and 350 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：284 / 293
页数：10
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