Structural, electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO) thin films prepared by RF magnetron sputtering

被引：71

作者：

Lin, Wei ^{[1
]}

Ma, Ruixin ^{[1
]}

Shao, Wei ^{[1
]}

Liu, Bin ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Non Ferrous Met, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 11期

关键词：

zinc oxide; RF magnetron sputtering; transparent conductive thin film; optical and electronic properties;

D O I：

10.1016/j.apsusc.2006.11.032

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of the gadolinium doping on the structural features and opto-electrical properties of ZnO:Al (ZAO) films deposited by radio frequency (RF) magnetron sputtering method onto glass substrates was investigated. X-ray analysis showed that the films were polycrystalline fitting well with a hexagonal wurtzite structure and have preferred orientation in [002] direction. The Gd doped ZAO film with a thickness of 140 nm showed a high visible region transmittance of 90%. The optical band gap was found to be 3.38 eV for pure ZnO film and 3.58 eV for ZAO films while a drop in optical band gap of ZAO film was observed by Gd doping. The lowest resistivities of 8.4 x 10(-3) and 10.6 x 10(-3) Omega cm were observed for Gd doped and undoped ZAO films, respectively, which were deposited at room temperature and annealed at 150 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：5179 / 5183

页数：5

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