Structural, optical, and electrical properties of Mo-doped ZnO thin films prepared by magnetron sputtering

被引：41
|
作者：
Wu, Muying [1 ]
Yu, Shihui [2 ]
Chen, Guihua [1 ]
He, Lin [1 ]
Yang, Lei [1 ]
Zhang, Weifeng [3 ,4 ]
机构：
[1] Dongguan Univ Technol, Sch Elect Engn, Dongguan 523808, Guangdong, Peoples R China
[2] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China
[3] Henan Univ, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[4] Henan Univ, Sch Phys & Elect, Kaifeng 475004, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2015年 / 324卷
关键词：
MZO; Magnetron sputtering; Preferred orientation; TCO; SUBSTRATE-TEMPERATURE; TRANSPARENT; OXIDE; THICKNESS; PRESSURE; OXYGEN; RF;
D O I：
10.1016/j.apsusc.2014.11.039
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Molybdenum doped zinc oxide thin films have been prepared by RF magnetron sputtering. The influence of the film thickness (120-500 nm) on the structural, electrical, and optical properties of the films is investigated respectively. X-ray diffraction (XRD) studies reveal that with an increase in the film thickness, the crystallinity of the film improves. The obtained film with thickness of 500 nm exhibits the best electrical properties with the lowest resistivity of around 9.6 x 10(-4) Omega cm. The mobility varied from 7.8 to 14.7 cm(2) V-1 s(-1) without reducing the achieved high carrier concentration of similar to 4.5 x 10(20) cm(-3). Optical band gaps extracted from transmission spectra shows irregular changes due to the Burstein-Moss shift modulated by many-body effects. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：791 / 796
页数：6
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