Reactive ion etching of GaN in BCl3/N-2 plasmas

被引：0
|
作者：
Fedison, JB [1 ]
Chow, TP [1 ]
Lu, H [1 ]
Bhat, IB [1 ]
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECT & ELECT MFG,TROY,NY 12180
来源：
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1996年 / 96卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：168 / 179
页数：12
相关论文
共 50 条
  • [41] An experimental study of the reactive ion etching (RIE) of GaP using BCl3 plasma processing
    Yang, S. -H.
    Bandaru, P. R.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 143 (1-3): : 27 - 30
  • [42] Reactive ion etching of Co-Zr-Nb thin film using BCl3
    Ichihara, Katsutaro
    Hara, Michiko
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (7 B): : 4874 - 4878
  • [43] Reactive ion etching of vertical GaN mesas by the addition of CH4 to BCl3/H2/Ar inductively coupled plasma
    Lee, BY
    Jung, SY
    Lee, JL
    Park, YJ
    Paek, MC
    Cho, KI
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 471 - 473
  • [44] REACTIVE ION-BEAM ETCHING OF INP WITH N-2 AND N-2/O-2 MIXTURES
    KATZSCHNER, W
    NIGGEBRUGGE, U
    LOFFLER, R
    SCHROTERJANSSEN, H
    APPLIED PHYSICS LETTERS, 1986, 48 (03) : 230 - 232
  • [45] REACTIVE ION ETCHING OF ALUMINUM SILICON IN BBR3/CL2 AND BCL3/CL2 MIXTURES
    BELL, HB
    ANDERSON, HM
    LIGHT, RW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (05) : 1184 - 1191
  • [46] Plasma etching selectivity of ZrO2 to Si in BCl3/Cl2 plasmas
    Sha, L
    Chang, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (06): : 1915 - 1922
  • [47] BCl3/N2 dry etching of InP, InAlP, and InGaP
    J Vac Sci Technol B, 3 (1758):
  • [48] Smooth etching of sapphire wafers using BCl3 inductively coupled plasmas
    Xue, Xiao-Lin
    Han, Yan-Jun
    Zhang, Xian-Peng
    Jiang, Yang
    Ma, Hong-Xia
    Liu, Zhong-Tao
    Luo, Yi
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2007, 18 (09): : 1078 - 1081
  • [49] ANISOTROPIC REACTIVE ION ETCHING OF ALUMINUM USING CL2, BCL3, AND CH4 GASES
    LUTZE, JW
    PERERA, AH
    KRUSIUS, JP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (01) : 249 - 252
  • [50] Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas
    Choi, K. H.
    Lee, S. H.
    Park, J. H.
    Sohn, K. Y.
    Lee, J. W.
    Pearton, S. J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (03):
12345