Reactive ion etching of GaN in BCl3/N-2 plasmas

被引：0
|
作者：
Fedison, JB [1 ]
Chow, TP [1 ]
Lu, H [1 ]
Bhat, IB [1 ]
机构：
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECT & ELECT MFG,TROY,NY 12180
来源：
PROCEEDINGS OF THE FIRST SYMPOSIUM ON III-V NITRIDE MATERIALS AND PROCESSES | 1996年 / 96卷 / 11期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：168 / 179
页数：12
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