1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth

被引：2

作者：

Swaminathan, V ^{[1
]}

Reynolds, CL ^{[1
]}

Geva, M ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Breinigsville, PA 18031 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期

关键词：

D O I：

10.1063/1.367316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of Zn diffusion behavior in capped mesa buried heterostructure lasers reveals the Zn profile in the base epitaxial region of InGaAsP/InP heterostructures to be dominated by diffusion during regrowth. This diffusion behavior has enabled us to fabricate a laser without any Zn doping in the p clad during base growth. The lasing characteristics at 25 degrees C are comparable to those of normally Zn-doped structures. The Zn diffusion into the undoped cladding layer, and thus, the temperature performance of these lasers are dependent on the level of Zn doping in third growth. (C) 1998 American Institute of Physics.

引用

页码：4540 / 4541

页数：2

共 50 条

[31] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INGAASP INP LAYERS AND FABRICATION OF 1.3-MU-M PLANAR BURIED HETEROSTRUCTURE LASERS
KAWABATA, T
ISHIGURO, H
KOIKE, S
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) : 3684 - 3688
[32] DEGRADATION MECHANISM IN 1.3 MU-M INGAASP/INP BURIED CRESCENT LASER DIODE AT A HIGH-TEMPERATURE
OOMURA, E
HIGUCHI, H
HIRANO, R
SAKAKIBARA, Y
NAMIZAKI, H
SUSAKI, W
ELECTRONICS LETTERS, 1983, 19 (11) : 407 - 408
[33] INGAASP/INP CURRENT CONFINEMENT MESA SUBSTRATE BURIED HETEROSTRUCTURE LASER DIODE FABRICATED BY ONE-STEP LIQUID-PHASE EPITAXY
SUGIMOTO, M
SUZUKI, A
NOMURA, H
LANG, R
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (04) : 496 - 503
[34] INFLUENCE OF (111) REGROWTH SIDEWALL INTERFACES ON THE PERFORMANCE OF 1.54 MU-M INGAASP/INP ETCHED-MESA-BURIED-HETEROSTRUCTURE LASERS
CHU, SNG
LOGAN, RA
TEMKIN, H
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2434 - 2437
[35] GROWTH AND CHARACTERIZATION OF HIGH-YIELD, RELIABLE, HIGH-POWER, HIGH-SPEED, INP INGAASP CAPPED MESA BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK (CMBH-DFB) LASERS
ZILKO, JL
KETELSEN, LJP
TWU, Y
WILT, DP
NAPHOLTZ, SG
BLAHA, JP
STREGE, KE
RIGGS, VG
VANHAREN, DL
LEUNG, SY
NITZSCHE, PM
LONG, JA
ROXLO, CB
PRZYBLEK, G
LOPATA, J
FOCHT, MW
KOSZI, LA
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (10) : 2091 - 2095
[36] HIGH-POWER SLM OPERATION OF 1.3-MU-M INP/INGAASP DFB LD WITH DOUBLY BURIED HETEROSTRUCTURE ON P-TYPE INP SUBSTRATE
SUZUKI, Y
NAGAI, H
NOGUCHI, Y
MATSUOKA, T
KURUMADA, K
ELECTRONICS LETTERS, 1984, 20 (21) : 881 - 882
[37] MELTBACK AND PULLOVER AS CAUSES OF DISTURBANCES IN LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP-INP 1.3-MU-M LASER MATERIAL
LADANY, I
SMITH, RT
MAGEE, CW
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) : 6064 - 6067
[38] VPE-GROWN 1.3 MU-M INGAASP/INP DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH LPE-BURYING LAYERS
YANASE, T
KATO, Y
MITO, I
KOBAYASHI, K
NISHIMOTO, H
USUI, A
KOBAYASHI, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L415 - L416
[39] Study on high-temperature performances of 1.3-μm InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
Jin, JY
Shi, J
Tian, DC
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) : 276 - 278
[40] 1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications
Tsai, Chia-Lung
Chou, Yi-Lun
Wang, Y. S.
Chang, S. J.
Wu, Meng-Chyi
Lin, W.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (12) : H903 - H907

← 1 2 3 4 5 →