GROWTH AND CHARACTERIZATION OF HIGH-YIELD, RELIABLE, HIGH-POWER, HIGH-SPEED, INP INGAASP CAPPED MESA BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK (CMBH-DFB) LASERS

被引：36
|
作者：
ZILKO, JL
KETELSEN, LJP
TWU, Y
WILT, DP
NAPHOLTZ, SG
BLAHA, JP
STREGE, KE
RIGGS, VG
VANHAREN, DL
LEUNG, SY
NITZSCHE, PM
LONG, JA
ROXLO, CB
PRZYBLEK, G
LOPATA, J
FOCHT, MW
KOSZI, LA
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 10期
关键词：
D O I：
10.1109/3.35720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2091 / 2095
页数：5
相关论文
共 44 条
  • [1] WIDE-BANDWIDTH AND HIGH-POWER INGAASP DISTRIBUTED FEEDBACK LASERS
    DUTTA, NK
    WANG, SJ
    PICCIRILLI, AB
    KARLICEK, RF
    BROWN, RL
    WASHINGTON, M
    CHAKRABARTI, UK
    GNAUCK, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 4640 - 4644
  • [2] High-speed and high-power 1.3 μm InGaAsP/InP selective proton-bombarded buried crescent lasers with optical field attenuation regions
    Zhang, BJ
    Yi, MB
    Song, JF
    Gao, DS
    Zhu, NH
    Wu, RH
    Wang, W
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12A): : 6729 - 6731
  • [3] MBE growth of reliable high-power lasers with InGaAsP quantum well
    Kuang, GK
    Hernandez, IC
    McELhinney, M
    Zeng, L
    Caliva, B
    Walker, R
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) : 8 - 11
  • [4] Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers
    Akram, M. Nadeem
    Kjebon, O.
    Chacinski, M.
    Schatz, R.
    Berggren, J.
    Olsson, F.
    Lourdudoss, S.
    Berrier, A.
    [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2009, 26 (02) : 318 - 327
  • [5] HIGH-POWER INP/INGAASP BURIED HETEROSTRUCTURE LASER FOR A WAVELENGTH OF 1.15-MU-M
    RAKOVICS, V
    SERENYI, M
    KOLTAI, F
    PUSPOKI, S
    LABADI, Z
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 296 - 298
  • [6] Very high power InGaAsP/InP distributed feedback lasers at 1550 nm wavelength
    Chen, TR
    Hsin, W
    Bar-Chaim, N
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (11) : 1269 - 1271
  • [7] HIGH-POWER OPERATION OF INP/INGAASP DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASERS WITH ASYMMETRIC FACET COATINGS
    KOSZI, LA
    TEMKIN, H
    PRYZBYLEK, GJ
    SEGNER, BP
    NAPHOLTZ, SG
    BOGDANOWICZ, CM
    DUTTA, NK
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2219 - 2221
  • [8] HIGH-EFFICIENCY INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK LASERS AT 1.55 MU-M
    WAKAO, K
    KIHARA, K
    KOTAKI, Y
    KUSUNOKI, T
    SUDO, H
    ISOZUMI, S
    YAMAKOSHI, S
    ISHIKAWA, H
    IMAI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 2153 - 2154
  • [9] Yield analysis for high-speed 1310 nm distributed feedback lasers
    Karinen, Jukka
    Laakso, Antti
    Dumitrescu, Mihail
    [J]. PHOTONICS NORTH 2010, 2010, 7750
  • [10] HIGH-POWER BURIED HETEROSTRUCTURE INGAASP/INP LASER-DIODES PRODUCED BY AN IMPROVED REGROWTH PROCESS
    GARBUZOV, DZ
    BERISHEV, IE
    ILYIN, YV
    ILYINSKAYA, ND
    OVCHINNIKOV, AV
    PIKHTIN, NA
    TARASOV, IS
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (01) : 319 - 321
12345