GROWTH AND CHARACTERIZATION OF HIGH-YIELD, RELIABLE, HIGH-POWER, HIGH-SPEED, INP INGAASP CAPPED MESA BURIED HETEROSTRUCTURE DISTRIBUTED FEEDBACK (CMBH-DFB) LASERS

被引：36
|
作者：
ZILKO, JL
KETELSEN, LJP
TWU, Y
WILT, DP
NAPHOLTZ, SG
BLAHA, JP
STREGE, KE
RIGGS, VG
VANHAREN, DL
LEUNG, SY
NITZSCHE, PM
LONG, JA
ROXLO, CB
PRZYBLEK, G
LOPATA, J
FOCHT, MW
KOSZI, LA
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 10期
关键词：
D O I：
10.1109/3.35720
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2091 / 2095
页数：5
相关论文
共 44 条
  • [31] Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (lambda=1.3 mu m) and InGaAsP/GaAs (lambda=0.8 mu m) laser diodes
    Berishev, IE
    Gorbachev, AY
    Mishournyi, VA
    Ilyinskaya, ND
    Stankevich, AL
    Tarasov, IS
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (09) : 1186 - 1188
  • [32] 1.3-μm AlGaInAs Multiple-Quantum-Well Semi-insulating Buried-Heterostructure Distributed-Feedback Lasers for High-Speed Direct Modulation
    Otsubo, Koji
    Matsuda, Manabu
    Takada, Kan
    Okumura, Shigekazu
    Ekawa, Mitsuru
    Tanaka, Hiromasa
    Ide, Satoshi
    Mori, Kazuyuki
    Yamamoto, Tsuyoshi
    [J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 687 - 693
  • [33] AlGaInAs Semi-Insulating Buried-Heterostructure Distributed Reflector Lasers for Low-Driving-Current High-Speed Direct Modulation
    Simoyama, Takasi
    Matsuda, Manabu
    Okumura, Shigekazu
    Uetake, Ayahito
    Ekawa, Mitsuru
    Yamamoto, Tsuyoshi
    [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS XI, 2012, 8277
  • [34] HIGH-POWER AND WIDE-TEMPERATURE-RANGE OPERATIONS OF INGAASP-INP STRAINED MQW LASERS WITH REVERSE-MESA RIDGE-WAVE-GUIDE STRUCTURE
    AOKI, M
    TSUCHIYA, T
    NAKAHARA, K
    KOMORI, M
    UOMI, K
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (01) : 13 - 15
  • [35] CHARACTERIZATION OF INGAASP INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY FOR SEMICONDUCTOR-LASERS BY PHOTOLUMINESCENCE INVESTIGATION WITH HIGH-POWER YAG-LASER EXCITATION
    NAKAO, M
    SATO, K
    OISHI, M
    ITAYA, Y
    IMAMURA, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1722 - 1728
  • [36] WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS
    ZAH, CE
    OSINSKI, JS
    MENOCAL, SG
    TABATABAIE, N
    LEE, TP
    DENTAI, AG
    BURRUS, CA
    [J]. ELECTRONICS LETTERS, 1987, 23 (01) : 52 - 53
  • [37] HIGH-POWER, HIGH BANDWIDTH (12GHZ) ALL MOVPE GROWN BURIED HETEROSTRUCTURE LASERS AT 1.3MU-M UTILIZING SEMI-INSULATING INP CURRENT CONFINING LAYERS
    DUNCAN, WJ
    SPURDENS, PC
    COOPER, DM
    NELSON, AW
    [J]. SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 301 - 301
  • [38] HIGH-SPEED HIGH-POWER 1.3-MU-M INGAASP/INP SURFACE-EMITTING LEDS FOR SHORT-HAUL WIDE-BANDWIDTH OPTICAL-FIBER COMMUNICATIONS
    KING, WC
    CHIN, BH
    CAMLIBEL, I
    ZIPFEL, CL
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 335 - 337
  • [39] HIGH-SPEED (10 GBIT/S) AND LOW-DRIVE-VOLTAGE (1V PEAK TO PEAK) INGAAS/INGAASP MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER WITH SEMIINSULATING BURIED HETEROSTRUCTURE
    AOKI, M
    SUZUKI, M
    TAKAHASHI, M
    SANO, H
    IDO, T
    KAWANO, T
    TAKAI, A
    [J]. ELECTRONICS LETTERS, 1992, 28 (12) : 1157 - 1158
  • [40] HIGH-POWER AND HIGH-SPEED SEMI-INSULATING BLOCKED V-GROOVED INNER-STRIPE LASERS AT 1.3-MU-M WAVELENGTH FABRICATED ON P-INP SUBSTRATES
    HORIKAWA, H
    WADA, H
    MATSUI, Y
    YAMADA, T
    OGAWA, Y
    KAWAI, Y
    [J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1077 - 1079
12345