WIDE-BANDWIDTH AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT LASERS WITH SEMIINSULATING FE-DOPED INP CURRENT BLOCKING LAYERS

被引：13
|
作者：
ZAH, CE [1 ]
OSINSKI, JS [1 ]
MENOCAL, SG [1 ]
TABATABAIE, N [1 ]
LEE, TP [1 ]
DENTAI, AG [1 ]
BURRUS, CA [1 ]
机构：
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 01期
关键词：
D O I：
10.1049/el:19870038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：52 / 53
页数：2
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