Electron spin filtering by thin GaNAs/GaAs multiquantum wells

被引：33

作者：

Puttisong, Y. ^{[1
]}

Wang, X. J. ^{[1
]}

Buyanova, I. A. ^{[1
]}

Carrere, H. ^{[2
]}

Zhao, F. ^{[2
]}

Balocchi, A. ^{[2
]}

Marie, X. ^{[2
]}

Tu, C. W. ^{[3
]}

Chen, W. M. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

[2] Univ Toulouse, LPCNO, INSA, UPS,CNRS, F-31077 Toulouse, France

[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

关键词：

electron spin polarisation; gallium arsenide; III-V semiconductors; nitrogen compounds; photoluminescence; semiconductor quantum wells; DEPENDENT RECOMBINATION; ROOM-TEMPERATURE; SEMICONDUCTOR; SPINTRONICS; RELAXATION; INJECTION; DYNAMICS; GAASN;

D O I：

10.1063/1.3299015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effectiveness of the recently discovered defect-engineered spin-filtering effect is closely examined in GaNAs/GaAs multiquantum wells (QWs) as a function of QW width. In spite of narrow well widths of 3-9 nm, rather efficient spin filtering is achieved at room temperature. It leads to electron spin polarization larger than 18% and an increase in photoluminescence intensity by 65% in the 9 nm wide QWs. A weaker spin filtering effect is observed in the narrower QWs, mainly due to a reduced sheet concentration of spin-filtering defects (e.g., Ga(i) interstitial defects).

引用

页数：3

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