Dynamic theory of crystallization in Ge2Sb2.3Te5 phase-change optical recording media

被引:22
|
作者
Wright, EM [1 ]
Khulbe, PK [1 ]
Mansuripur, M [1 ]
机构
[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
关键词
D O I
10.1364/AO.39.006695
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We develop a theory of the crystallization dynamics of Ge2Sb2.3Te5 thin films that shows good qualitative agreement with experimental reflectivity results from a two-laser static tester. The theory is adapted from the nucleation theory of liquid droplets from supersaturated vapor and elucidates the physics underlying the amorphous-to-crystalline phase transformation under short-pulse excitation. In particular, the theory provides a physical picture in which crystalline islands, or basic embryos, are thermally activated in the amorphous material and subsequently grow as stable nuclei are formed. (C) 2000 Optical Society of America OCIS codes: 210.0210, 210.4590, 210.4770, 210.4810.
引用
收藏
页码:6695 / 6701
页数:7
相关论文
共 50 条
  • [41] Controlling optical polarization conversion with Ge2Sb2Te5-based phase-change dielectric metamaterials
    Zhu, Wei
    Yang, Ruisheng
    Fan, Yuancheng
    Fu, Quanhong
    Wu, Hongjing
    Zhang, Peng
    Shen, Nian-Hai
    Zhang, Fuli
    NANOSCALE, 2018, 10 (25) : 12054 - 12061
  • [42] Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage
    Wang, K
    Steimer, C
    Wamwangi, D
    Ziegler, S
    Wuttig, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (08): : 1611 - 1616
  • [43] Effect of indium doping on Ge2Sb2Te5 thin films for phase-change optical storage
    K. Wang
    C. Steimer
    D. Wamwangi
    S. Ziegler
    M. Wuttig
    Applied Physics A, 2005, 80 : 1611 - 1616
  • [44] Evidence for segregation of Te in Ge2Sb2Te5 films:: Effect on the "phase-change" stress
    Krusin-Elbaum, L.
    Cabral, C., Jr.
    Chen, K. N.
    Copel, M.
    Abraham, D. W.
    Reuter, K. B.
    Rossnagel, S. M.
    Bruley, J.
    Deline, V. R.
    APPLIED PHYSICS LETTERS, 2007, 90 (14)
  • [45] The effect of thickness on texture of Ge2Sb2Te5 phase-change films
    Qiongyan Tang
    Tianze He
    Kun Yu
    Yan Cheng
    Ruijuan Qi
    Rong Huang
    Jin Zhao
    Wenxiong Song
    Zhitang Song
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 5848 - 5853
  • [46] Coherent gigahertz phonons in Ge2Sb2Te5 phase-change materials
    Hase, Muneaki
    Fons, Paul
    Kolobov, Alexander V.
    Tominaga, Junji
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2015, 27 (48)
  • [47] Photoassisted amorphization of the phase-change memory alloy Ge2Sb2Te5
    Fons, P.
    Osawa, H.
    Kolobov, A. V.
    Fukaya, T.
    Suzuki, M.
    Uruga, T.
    Kawamura, N.
    Tanida, H.
    Tominaga, J.
    PHYSICAL REVIEW B, 2010, 82 (04):
  • [48] New Structural Picture of the Ge2Sb2Te5 Phase-Change Alloy
    Liu, X. Q.
    Li, X. B.
    Zhang, L.
    Cheng, Y. Q.
    Yan, Z. G.
    Xu, M.
    Han, X. D.
    Zhang, S. B.
    Zhang, Z.
    Ma, E.
    PHYSICAL REVIEW LETTERS, 2011, 106 (02)
  • [49] Fabrication of phase-change Ge2Sb2Te5 nano-rings
    Chu, Cheng Hung
    Tseng, Ming Lun
    Da Shiue, Chiun
    Chen, Shuan Wei
    Chiang, Hai-Pang
    Mansuripur, Masud
    Tsai, Din Ping
    OPTICS EXPRESS, 2011, 19 (13): : 12652 - 12657
  • [50] Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties
    Gourvest, E.
    Pelissier, B.
    Vallee, C.
    Roule, A.
    Lhostis, S.
    Maitrejean, S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (04) : H373 - H377