Dynamic theory of crystallization in Ge2Sb2.3Te5 phase-change optical recording media

被引:22
|
作者
Wright, EM [1 ]
Khulbe, PK [1 ]
Mansuripur, M [1 ]
机构
[1] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
关键词
D O I
10.1364/AO.39.006695
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We develop a theory of the crystallization dynamics of Ge2Sb2.3Te5 thin films that shows good qualitative agreement with experimental reflectivity results from a two-laser static tester. The theory is adapted from the nucleation theory of liquid droplets from supersaturated vapor and elucidates the physics underlying the amorphous-to-crystalline phase transformation under short-pulse excitation. In particular, the theory provides a physical picture in which crystalline islands, or basic embryos, are thermally activated in the amorphous material and subsequently grow as stable nuclei are formed. (C) 2000 Optical Society of America OCIS codes: 210.0210, 210.4590, 210.4770, 210.4810.
引用
收藏
页码:6695 / 6701
页数:7
相关论文
共 50 条
  • [21] The effect of thickness on the Bi-Ge-Sb-Te films for reversible phase-change optical recording
    Lin, SS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 129 (1-3): : 116 - 120
  • [22] Dislocations in phase-change Ge2Sb2Te5 alloy
    Zhang, Wei
    Song, Se Ahn
    Jeong, Hong Sik
    Kim, Jin Gyu
    Kim, Youn-Joong
    ADVANCED MATERIALS AND PROCESSING, 2007, 26-28 : 1097 - +
  • [23] Simulation of crystallization in Ge2Sb2Te5: A memory effect in the canonical phase-change material
    Kalikka, J.
    Akola, J.
    Jones, R. O.
    PHYSICAL REVIEW B, 2014, 90 (18):
  • [24] Crystallization Properties of the Ge2Sb2Te5 Phase-Change Compound from Advanced Simulations
    Ronneberger, Ider
    Zhang, Wei
    Eshet, Hagai
    Mazzarello, Riccardo
    ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (40) : 6407 - 6413
  • [25] Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices
    Senkader, S
    Wright, CD
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) : 504 - 511
  • [26] Investigation of the crystallization kinetics in Ge-Sb-Te-Bi and Ge-Sb-Te-In phase-change memory materials
    Babich, A.
    Sherchenkov, A.
    Kozyukhin, S.
    Lazarenko, P.
    Timoshenkov, S.
    Boytsova, O.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2016, 18 (3-4): : 235 - 239
  • [27] THE STRUCTURE AND CRYSTALLIZATION CHARACTERISTICS OF PHASE-CHANGE OPTICAL DISK MATERIAL GE1SB2TE4
    MAO, ZL
    CHEN, H
    JUNG, AL
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2338 - 2342
  • [28] Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
    Park, Jong-Bong
    Park, Gyeong-Su
    Baik, Hion-Suck
    Lee, Jang-Ho
    Jeong, Hongsik
    Kim, Kinam
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) : H139 - H141
  • [29] Scanning electron microscope for in situ study of crystallization of Ge2Sb2Te5 in phase-change memory
    Yin, You
    Niida, Daisuke
    Ota, Kazuhiro
    Sone, Hayato
    Hosaka, Sumio
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (12):
  • [30] Potential of Ge-Sb-Te phase-change optical disks for high-data-rate recording
    Yamada, N
    OPTICAL DATA STORAGE '97, 1997, 3109 : 28 - 37