Highly Reactive TiO2 Anatase Single Crystal Domains Grown by Atomic Layer Deposition

被引:9
|
作者
Ishchenko, Olga M. [1 ,2 ]
Lamblin, Guillaume [1 ]
Arl, Didier [1 ]
Adjeroud, Noureddine [1 ]
Guillot, Jerome [1 ]
Grysan, Patrick [1 ]
Nukala, Pavan [4 ]
Guyon, Julien [5 ]
Fechete, Ioana [2 ]
Garin, Francois [2 ]
Turek, Philippe [3 ]
Lenoble, Damien [1 ]
机构
[1] Luxembourg Inst Sci & Technol, Mat Res & Technol MRT Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg
[2] Univ Strasbourg, UMR7515, ICPEES, 25 Rue Becquerel, F-67087 Strasbourg, France
[3] Univ Strasbourg, UMR7177, Inst Chim Strasbourg, Lab POMAM, 4 Rue Blaise Pascal, F-67081 Strasbourg, France
[4] Univ Paris Saclay, CNRS UMR 8580, Cent Supelec, Lab Struct Proprietes & Modelisat Solides, F-92295 Chatenay Malabry, France
[5] Univ Lorraine, CNRS UMR 7239, Lab LEM3, 7 Rue Felix Savart, F-57073 Metz, France
关键词
EXPLOSIVE CRYSTALLIZATION; TITANIUM-DIOXIDE; PHOTOCATALYTIC DEGRADATION; ENVIRONMENTAL APPLICATIONS; ENERGY-CONVERSION; THIN-FILMS; 001; FACETS; WATER; NANOPARTICLES; SURFACE;
D O I
10.1021/acs.cgd.8b00170
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Anatase TiO2 films with unusual domains-like morphology were obtained by postdeposition annealing of amorphous TiO2 films deposited by atomic layer deposition (ALD). Such particular morphology was observed only for TiO2 films deposited using TiCl4 precursor in a nonconventional ALD regime where the reaction byproducts or nonreacted precursors are incorporated into the film and induce an explosive recrystallization upon annealing. This recrystallization leads to the formation of micrometric single crystal domains. The investigation of domains by electron backscatter diffraction shows the formation of a significant amount of highly reactive anatase crystalline facets such as (111) that contradicts fundamental crystal growth rules. The stabilization of (111) facets in films without additional seed layers has a strong interest for photocatalysis-based applications for environmental remediation or hydrogen production.
引用
收藏
页码:4929 / 4936
页数:8
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