Influence of temperature on the electronic properties of Si δ-doped GaAs structures

被引：9

作者：

Ozturk, E ^{[1
]}

Ergun, Y

Sari, H

Sokmen, I

机构：

[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey

[2] Dokuzeylul Univ, Dept Phys, Izmir, Turkey

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2003年 / 21卷 / 02期

关键词：

D O I：

10.1051/epjap:2002111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.

引用

页码：97 / 101

页数：5

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