Effects of temperature on electronic structures of barrier-δ-doped quantum wells Si/Ge0.3Si0.7

被引：0

作者：

Xu, Zhizhong ^{[1
]}

机构：

[1] Fudan Univ, Shanghai, China

来源：

Acta Metallurgica Sinica (English Edition), Series A: Physical Metallurgy & Materials Science | 1996年 / 9卷 / 05期

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摘要：

引用

页码：561 / 567

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