MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires

被引：6

作者：

Kumar, Arun ^{[1
]}

Cecchini, Raimondo ^{[1
,2
]}

Wiemer, Claudia ^{[1
]}

Mussi, Valentina ^{[3
]}

De Simone, Sara ^{[3
]}

Calarco, Raffaella ^{[3
]}

Scuderi, Mario ^{[4
]}

Nicotra, Giuseppe ^{[4
]}

Longo, Massimo ^{[1
,3
]}

机构：

[1] CNR, Inst Microelect & Microsyst, Via C Olivetti 2, I-20864 Agrate Brianza, Italy

[2] CNR, Inst Microelect & Microsyst, Via Gobetti 101, I-40129 Bologna, Italy

[3] CNR, Inst Microelect & Microsyst, Via Fosso Cavaliere 100, I-00133 Rome, Italy

[4] CNR, Inst Microelect & Microsyst, Str VIII,5, I-95121 Catania, Italy

来源：

COATINGS | 2021年 / 11卷 / 06期

关键词：

metalorganic chemical vapor deposition (MOCVD); nanowires; core-shell; GeTe; Sb2Te3; THIN-FILMS; PHASE; NONVOLATILE; GETE;

D O I：

10.3390/coatings11060718

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the self-assembly of core-shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour-liquid-solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core-shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core-shell diameters in the range of 50-130 nm and an average length up to 7 mu m.

引用

页数：9

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