Catalyst-free growth of Sb2Te3 nanowires

In this study, a catalyst-free growth method was discovered to prepare the high-quality single crystal Sb2Te3 nanowires from the Al:Ge:Sb:Te thin films. The diameters of Sb2Te3 nanowires were found to be similar to 100 nm and their lengths were as great as tens of micrometers. The Al content and the annealing temperature play an important role in the growth of Sb2Te3 nanowires. When the Al content (>12.4 at.%) was sufficiently contained in Al:Ge:Sb:Te film, Sb2Te3 nanowires were extruded spontaneously on the surface of thin film with increase in annealing temperatures. Compared with the vapor-liquid-solid method, our method has advantages of low temperature (similar to 300 degrees C) and no impurities, such as a metal catalyst. (C) 2010 Elsevier B.V. All rights reserved.