MOCVD Growth of GeTe/Sb2Te3 Core-Shell Nanowires

被引：6
|
作者：
Kumar, Arun [1 ]
Cecchini, Raimondo [1 ,2 ]
Wiemer, Claudia [1 ]
Mussi, Valentina [3 ]
De Simone, Sara [3 ]
Calarco, Raffaella [3 ]
Scuderi, Mario [4 ]
Nicotra, Giuseppe [4 ]
Longo, Massimo [1 ,3 ]
机构：
[1] CNR, Inst Microelect & Microsyst, Via C Olivetti 2, I-20864 Agrate Brianza, Italy
[2] CNR, Inst Microelect & Microsyst, Via Gobetti 101, I-40129 Bologna, Italy
[3] CNR, Inst Microelect & Microsyst, Via Fosso Cavaliere 100, I-00133 Rome, Italy
[4] CNR, Inst Microelect & Microsyst, Str VIII,5, I-95121 Catania, Italy
来源：
COATINGS | 2021年 / 11卷 / 06期
关键词：
metalorganic chemical vapor deposition (MOCVD); nanowires; core-shell; GeTe; Sb2Te3; THIN-FILMS; PHASE; NONVOLATILE; GETE;
D O I：
10.3390/coatings11060718
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the self-assembly of core-shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour-liquid-solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core-shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core-shell diameters in the range of 50-130 nm and an average length up to 7 mu m.
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页数：9
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