Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer composition

被引：18

作者：

Matsumura, N ^{[1
]}

Sakamoto, T ^{[1
]}

Saraie, J ^{[1
]}

机构：

[1] Kyoto Inst Technol, Fac Engn & Design, Dept Elect & Informat Sci, Matsugasaki, Kyoto 6068585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

growth models; molecular beam epitaxy; alloys; cadmium compounds; semiconducting cadmium compounds;

D O I：

10.1016/S0022-0248(02)02434-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the growth conditions for controlling CdSeTe epilayer composition. Te atoms are readily incorporated into CdSeTe epilayers. However, we could not control the Te composition by the beam intensity ratio of Te to Cd. Therefore, Te atoms are not preferentially chemisorbed on Cd atoms. Both the difference in the desorption rate of the physisorbed atoms and the difference in the formation energies of CdSe and CdTe affect the composition. The epilayers composition could be well controlled in the entire range by the beam intensity ratio of J(Se)/(J(Se) + J(Te)) when the epilayers were grown on the U-stabilized surface. A simple growth model is presented and the sticking probabilities of Se and Te were determined from the growth rate to be 0.1 and 1, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：602 / 606

页数：5

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