Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

被引：4

作者：

Wu, Li-Juan ^{[1
]}

Zhang, Zhong-Jie ^{[1
]}

Song, Yue ^{[1
]}

Yang, Hang ^{[1
]}

Hu, Li-Min ^{[1
]}

Yuan, Na ^{[1
]}

机构：

[1] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410114, Hunan, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 02期

基金：

中国国家自然科学基金;

关键词：

LDMOS; high-K dielectric; highly doped N+ -layer; high voltage; specific on-resistance;

D O I：

10.1088/1674-1056/26/2/027101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A novel voltage-withstand substrate with high-K (HK, k > 3.9, k is the relative permittivity) dielectric and low specific on-resistance (R-on, (sp)) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N+ -layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N-d) and reshape the electric field distribution. The highly doped N+ -layer under the high-K dielectric acts as a low resistance path to reduce the R-on,(sp). The new device with the high breakdown voltage (BV), the low R-on,(sp), and the excellent figure of merit (FOM = BV2/ R-on,(sp)) is obtained. The BV of HKLR LDMOS is 534 V, R-on,(sp) is 70.6 m Omega.cm(2), and FOM is 4.039 MW.cm(2).

引用

页数：5

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