Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

A novel voltage-withstand substrate with high-K (HK, k > 3.9, k is the relative permittivity) dielectric and low specific on-resistance (R-on, (sp)) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N+ -layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N-d) and reshape the electric field distribution. The highly doped N+ -layer under the high-K dielectric acts as a low resistance path to reduce the R-on,(sp). The new device with the high breakdown voltage (BV), the low R-on,(sp), and the excellent figure of merit (FOM = BV2/ R-on,(sp)) is obtained. The BV of HKLR LDMOS is 534 V, R-on,(sp) is 70.6 m Omega.cm(2), and FOM is 4.039 MW.cm(2).