Dual-source chemical vapour deposition of titanium sulfide thin films from tetrakisdimethylamidotitanium and sulfur precursors

被引：27
|
作者：
Peters, ES [1 ]
Carmalt, CJ [1 ]
Parkin, IP [1 ]
机构：
[1] UCL, Christopher Ingold Labs, Dept Chem, London WC1H 0AJ, England
来源：
JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 23期
关键词：
D O I：
10.1039/b410390d
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The dual-source atmospheric pressure chemical vapour deposition (APCVD) of TiS2 thin films from [Ti(NMe2)(4)] and (BuSH)-S-t is presented. Deposition took place at low temperatures (175-500degreesC) and nitrogen and carbon contamination of the films was negligible. The APCVD reaction of [Ti(NMe2)4] and (Bu2S2)-S-t resulted in the formation of a TiS2 film at 600degreesC but at 300-550degreesC films with a Ti:S ratio of 1:1 by EDXA were produced. In contrast, films produced from [Ti(NMe2)(4)] and S(SiMe3)(2) at 350-600degreesC contained little sulfur (TiS0.1-0.3) but large amounts of nitrogen and carbon indicating that titanium carbonitride (TiC0.5N0.5) had formed. The films were characterised by EDXA, SEM, XPS and Raman spectroscopy.
引用
收藏
页码：3474 / 3477
页数：4
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