Dual-source chemical vapour deposition of titanium sulfide thin films from tetrakisdimethylamidotitanium and sulfur precursors

被引：27

作者：

Peters, ES ^{[1
]}

Carmalt, CJ ^{[1
]}

Parkin, IP ^{[1
]}

机构：

[1] UCL, Christopher Ingold Labs, Dept Chem, London WC1H 0AJ, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 23期

关键词：

D O I：

10.1039/b410390d

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The dual-source atmospheric pressure chemical vapour deposition (APCVD) of TiS2 thin films from [Ti(NMe2)(4)] and (BuSH)-S-t is presented. Deposition took place at low temperatures (175-500degreesC) and nitrogen and carbon contamination of the films was negligible. The APCVD reaction of [Ti(NMe2)4] and (Bu2S2)-S-t resulted in the formation of a TiS2 film at 600degreesC but at 300-550degreesC films with a Ti:S ratio of 1:1 by EDXA were produced. In contrast, films produced from [Ti(NMe2)(4)] and S(SiMe3)(2) at 350-600degreesC contained little sulfur (TiS0.1-0.3) but large amounts of nitrogen and carbon indicating that titanium carbonitride (TiC0.5N0.5) had formed. The films were characterised by EDXA, SEM, XPS and Raman spectroscopy.

引用

页码：3474 / 3477

页数：4

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