Anomalous PL brightening inside a current density filament in n-GaAs under a pulsed electric field

被引：0

作者：

Aoki, Kazunori ^{[1
]}

Sakamoto, Naozwni

Tanigawa, Takayuki

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

impact ionization avalanche; anomalous PL brightening; current density filament;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anomalous brightening of the photoluminescence (PL) during impact ionization avalanche has been found inside a current density filament in n-GaAs only when the short pulse voltage with the width less than 1 mu s was applied. The physical origin of the anomalous PL brightening has been discussed in terms of the partial Auger recombination.

引用

页码：127 / +

页数：2

共 50 条

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