Turing bifurcation during the nucleation process of a current density filament in n-GaAs

被引:4
|
作者
Aoki, K [1 ]
机构
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan
关键词
semiconductors; electronic transport; luminescence;
D O I
10.1016/S0038-1098(00)00031-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The nucleation process in spatiotemporal structures of a current density filament in n-GaAs has been investigated under a de + ac driving force V-dc + V-ac sin 2 pi f(d)(t) at 4.2 K. With V-dc, = 0.8 V, V-ac = 665 mV and f(d) = 100 kHz, we observe an S-shaped I-V curve caused by impact ionization avalanche of neutral shallow donors and subsequent formation of a well-defined current density filament. In the nucleation process, Turing bifurcation is observed at around the breakdown voltage, followed by a spatially periodic pattern of the current density as a pre-filament state. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:203 / 207
页数:5
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