Anomalous PL brightening inside a current density filament in n-GaAs under a pulsed electric field

被引：0
|
作者：
Aoki, Kazunori [1 ]
Sakamoto, Naozwni
Tanigawa, Takayuki
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
来源：
PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷
关键词：
impact ionization avalanche; anomalous PL brightening; current density filament;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Anomalous brightening of the photoluminescence (PL) during impact ionization avalanche has been found inside a current density filament in n-GaAs only when the short pulse voltage with the width less than 1 mu s was applied. The physical origin of the anomalous PL brightening has been discussed in terms of the partial Auger recombination.
引用
收藏
页码：127 / +
页数：2
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