Applying Amorphous InGaZnO-TFT to RFID tag

被引：0
|
作者：
Kawamura, Tetsufumi [1 ]
Ozaki, Hiroaki [1 ]
Wakana, Hironori [1 ]
Yamazoe, Takanori [1 ]
Uchiyama, Hiroyuki [1 ]
Hatano, Mutsuko [2 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
来源：
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2014年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Trial production of a thin-film radio frequency identification (RFID) tag with a built-in antenna was carried out using an amorphous InGaZnO (a-InGaZnO) thin-film transistor (TFT). A rectifier circuit, RF communication circuit, and logic circuit were formed using an a-InGaZnO 11,1 Even after adding an antenna, which is the thickest part, the RFID itself had a thickness of about 1 mu m. The RFID operated with a 13.56-MHz-band reader for IC cards and near field communication (NFC) devices. These results indicate the feasibility of an RFID tag that can be adhered to objects with a variety of shapes.
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页码：315 / 318
页数：4
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