Applying Amorphous InGaZnO-TFT to RFID tag

被引：0

作者：

Kawamura, Tetsufumi ^{[1
]}

Ozaki, Hiroaki ^{[1
]}

Wakana, Hironori ^{[1
]}

Yamazoe, Takanori ^{[1
]}

Uchiyama, Hiroyuki ^{[1
]}

Hatano, Mutsuko ^{[2
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

来源：

2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trial production of a thin-film radio frequency identification (RFID) tag with a built-in antenna was carried out using an amorphous InGaZnO (a-InGaZnO) thin-film transistor (TFT). A rectifier circuit, RF communication circuit, and logic circuit were formed using an a-InGaZnO 11,1 Even after adding an antenna, which is the thickest part, the RFID itself had a thickness of about 1 mu m. The RFID operated with a 13.56-MHz-band reader for IC cards and near field communication (NFC) devices. These results indicate the feasibility of an RFID tag that can be adhered to objects with a variety of shapes.

引用

页码：315 / 318

页数：4

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