共 50 条
- [42] Study of Ge-Rich Ge-Sb-Te Device-Dependent Segregation for Industrial Grade Embedded Phase-Change Memory [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (10):
- [46] Acceleration of crystallization speed by Sn addition to Ge-Sb-Te phase-change recording material [J]. Kojima, R, 2001, Japan Society of Applied Physics (40):
- [47] Long-range crystal-lattice distortion fields of epitaxial Ge-Sb-Te phase-change materials [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2014, 251 (04): : 769 - 773
- [49] Acceleration of crystallization speed by Sn addition to Ge-Sb-Te phase-change recording material [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (10): : 5930 - 5937