Submicron semiconductor structure for microwave detection

被引：7
|
作者：
Asmontas, S [1 ]
Gradauskas, J [1 ]
Suziedelis, A [1 ]
Valusis, G [1 ]
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00376-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Technology of the production of hot carrier planar submicron-sized microwave devices is suggested. Theoretical estimations and some experimental results on die sensitivity of these diodes operating in microwave frequency range is presented.
引用
收藏
页码：553 / 556
页数：4
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