THERMO-EMF OF SUBMICRON SEMICONDUCTOR-FILMS

被引：0
|
作者：
LOGVINOV, GN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 03期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The thermo-emf is calculated for a semiconductor sample of submicron dimensions connected to a closed electrical circuit. The electron temperature approximation is adopted. An analysis is made of the mechanisms of the appearance of this thermo-emf, which reduces to the formation of an energy inhomogeneity due to ballistic transfer of the electron energy in the bulk and by surface thermo-emf's at the contacts. An analysis is made of the open- and short-circuit operation.
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页码：260 / 264
页数：5
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