High-Speed Graphene Interconnects Monolithically Integrated with CMOS Ring Oscillators Operating at 1.3GHz

被引：0

作者：

Chen, Xiangyu ^{[1
]}

Lee, Kyeong-Jae ^{[2
]}

Akinwande, Deji ^{[1
]}

Close, Gael F. ^{[1
]}

Yasuda, Shinichi ^{[3
]}

Paul, Bipul ^{[4
]}

Fujita, Shinobu ^{[3
]}

Kong, Jing ^{[2
]}

Wong, H-S. Philip ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[3] Toshiba Co Ltd, Adv LSI Technol Lab, Kawasaki, Kanagawa, Japan

[4] Toshiba Amer Res, San Jose, CA USA

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully experimentally integrated graphene interconnects with commercial 0.251 mu m technology CMOS ring oscillator circuit using conventional fabrication techniques, and demonstrated high speed on-chip graphene interconnects that operates above 1GHz.

引用

页码：543 / +

页数：2

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