Monolithically Integrated High-Speed CMOS Photonic Transceivers

被引：57

作者：

Pinguet, T. ^{[1
]}

Analui, B. ^{[1
]}

Balmater, E. ^{[1
]}

Guckenberger, D. ^{[1
]}

Harrison, M. ^{[1
]}

Kournans, R. ^{[1
]}

Kucharski, D. ^{[1
]}

Liang, Y. ^{[1
]}

Masini, G. ^{[1
]}

Mekis, A. ^{[1
]}

Mirsaidi, S. ^{[1
]}

Narasimha, A. ^{[1
]}

Peterson, A. ^{[1
]}

Rines, D. ^{[1
]}

Sadagopan, V. ^{[1
]}

Sahni, S. ^{[1
]}

Sleboda, T. J. ^{[1
]}

Song, D. ^{[1
]}

Wang, Y. ^{[1
]}

Welch, B. ^{[1
]}

Witzens, J. ^{[1
]}

Yao, J. ^{[1
]}

Abdalla, S. ^{[1
]}

Gloeckner, S. ^{[1
]}

De Dobbelaere, P. ^{[1
]}

机构：

[1] Luxtera Inc, Carlsbad, CA USA

来源：

2008 5TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2008年

关键词：

CMOS; silicon photonics; modulators; waveguide photodetectors; system-on-a-chip;

D O I：

10.1109/GROUP4.2008.4638200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate monolithically integrated 4x10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.

引用

页码：362 / 364

页数：3

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