Effects of random jitter on high-speed CMOS oscillators

被引：0

作者：

Chen, YQ ^{[1
]}

Koneru, S ^{[1
]}

Lee, E ^{[1
]}

Geiger, R ^{[1
]}

机构：

[1] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

来源：

ISCAS '98 - PROCEEDINGS OF THE 1998 INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-6 | 1998年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A comparison is made of the effects of device noise on the jitter of three different high-speed voltage-controlled ring oscillators. These comparisons show that oscillator architecture plays a significant role in jitter performance and that in high-speed oscillators, the device noise contributed when the MOS transistors are operating in the triode region is substantial. These comparisons also show minimal differences in the noise predicted by the simple and widely used noise model and that predicted by the more complete but more complicated model recently introduced by Sodini and Hellums.

引用

页码：176 / 180

页数：5

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