X-ray reflectivity characterization of SiO2 thin film on Ni substrate

被引：0
|
作者：
Gupta, A [1 ]
Dassanacharya, BA [1 ]
Thakur, S [1 ]
机构：
[1] Interuniv Consortium DAE Facil, Indore 452017, Madhya Pradesh, India
来源：
SOLID STATE PHYSICS, VOL 41, 1998 | 1999年
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A thin SiO2 film deposited on polished Ni substrate has been characterised using x-ray reflectivity A systematic analysis of the reflectivity pattern yields information about various aspects of the film like, film thickness, ms roughness of the interfaces, refractive index of the deposited film etc., without taking recourse to involved least square fitting routines. It is found that SiO2 can be a good material for spacer layers in x-my and neutron mirrors.
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页码：306 / 307
页数：2
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