Improved field emission properties of ZnO NRs using Al-doped and post oxygen annealing

被引：1
|
作者：
Ganji, Bahram Azizollah [1 ]
Advand, Marziyeh [1 ]
Kolahdouz, Mohammadreza [2 ]
机构：
[1] Babol Noshirvani Univ Technol, Dept Elect & Comp Engn, Babol Sar, Iran
[2] Univ Tehran, Dept Elect & Comp Engn, Tehran, Iran
来源：
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2018年 / 24卷 / 06期
关键词：
CARBON NANOTUBES; NANORODS;
D O I：
10.1007/s00542-018-3706-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we synthesized Al doped ZnO (AZO) nanorods (NRs) and characterized their field emission properties. In addition, we considered the effect of post annealing process on the field emission characteristics of pure and doped ZnO NRs. Our results show that the field emission properties improve with the increased Al doping concentration in ZnO NRs. The field enhancement factor beta is enhanced by similar to 25% through 4% (weight ratio) Al doping. The field emission properties can be further improved by annealing in oxygen environment. Oxygen annealing modified the crystal structure of ZnO NRs and improves their field emission properties. Therefore, the 4 wt% Al doped sample with oxygen post annealing demonstrates the best field emission performance.
引用
收藏
页码：2611 / 2616
页数：6
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