Oxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowires

被引：20
|
作者：
Wang, Jyh-Liang [1 ]
Hsieh, Tsang-Yen [1 ]
Yang, Po-Yu [2 ,3 ]
Hwang, Chuan-Chou [1 ]
Shye, Der-Chi [1 ]
Lee, I-Che [2 ,3 ]
机构：
[1] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷
关键词：
Al-doped zinc oxide (AZO); Hydrothermal growth; Nanowire; Field emission; Oxygen annealing; PHOTOLUMINESCENCE CHARACTERISTICS; VAPOR-DEPOSITION; LOW-TEMPERATURE; NANORODS; FILMS; NANOTUBES; GROWTH; FE;
D O I：
10.1016/j.surfcoat.2012.01.019
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Al-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to investigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R = I-NBE/I-DLE) increases and the half-maximum of NBE peaks (FWHMNBE) decreases with the Al contents. Experimental results reveal the FE characteristics of AZO NWs are functions of Al content. Moreover, the larger R value and the smaller FWHMNBE are found as the oxygen annealing temperature increases. The hydrothermal AZO NWs annealed in oxygen ambience with an appropriate temperature (i.e. 300-500 degrees C) can demonstrate the further improved FE properties (i.e. the turn-on field of 1.70 V/mu m (at 1 mu A/cm(2)), threshold field of 2.92 V/mu m (at 1 mA/cm(2)), and beta of 4547). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：423 / 427
页数：5
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