Oxygen annealing effect on field-emission characteristics of hydrothermally synthesized Al-doped ZnO nanowires

被引：20
|
作者：
Wang, Jyh-Liang [1 ]
Hsieh, Tsang-Yen [1 ]
Yang, Po-Yu [2 ,3 ]
Hwang, Chuan-Chou [1 ]
Shye, Der-Chi [1 ]
Lee, I-Che [2 ,3 ]
机构：
[1] Ming Chi Univ Technol, Dept Elect Engn, Taipei 24301, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
来源：
SURFACE & COATINGS TECHNOLOGY | 2013年 / 231卷
关键词：
Al-doped zinc oxide (AZO); Hydrothermal growth; Nanowire; Field emission; Oxygen annealing; PHOTOLUMINESCENCE CHARACTERISTICS; VAPOR-DEPOSITION; LOW-TEMPERATURE; NANORODS; FILMS; NANOTUBES; GROWTH; FE;
D O I：
10.1016/j.surfcoat.2012.01.019
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Al-doped ZnO (AZO) nanowires (NWs) were synthesized using low-temperature hydrothermal growth to investigate field emission (FE) characteristics. The intensity ratio of NBE peak to DLE peak (R = I-NBE/I-DLE) increases and the half-maximum of NBE peaks (FWHMNBE) decreases with the Al contents. Experimental results reveal the FE characteristics of AZO NWs are functions of Al content. Moreover, the larger R value and the smaller FWHMNBE are found as the oxygen annealing temperature increases. The hydrothermal AZO NWs annealed in oxygen ambience with an appropriate temperature (i.e. 300-500 degrees C) can demonstrate the further improved FE properties (i.e. the turn-on field of 1.70 V/mu m (at 1 mu A/cm(2)), threshold field of 2.92 V/mu m (at 1 mA/cm(2)), and beta of 4547). (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：423 / 427
页数：5
相关论文
共 50 条
  • [31] Annealing effect on the optical and electrical properties of Al-doped ZnO transparent conducting films
    Kung, C. Y.
    Wang, F. H.
    Huang, C. L.
    Lin, T. T.
    Young, S. L.
    [J]. INNOVATION, COMMUNICATION AND ENGINEERING, 2014, : 43 - 45
  • [32] Improvement of characteristics of flexible Al-doped ZnO/Ag/Al-doped ZnO transparent conductive film using silver
    Manzen, Issei
    Yoshimura, Yukio
    Matsubara, Kazuki
    Nitta, Atsushi
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (02):
  • [33] Plasma versus thermal annealing for the Au-catalyst growth of ZnO nanocones and nanowires on Al-doped ZnO buffer layers
    Guell, Frank
    Martinez-Alanis, Paulina R.
    Roso, Sergio
    Salas-Perez, Carlos I.
    Garcia-Sanchez, Mario F.
    Santana, Guillermo
    Monroy, B. Marel
    [J]. MATERIALS RESEARCH EXPRESS, 2016, 3 (06):
  • [34] Study on field-emission characteristics of electrodeposited Co-doped ZnO thin films
    Wang, Aihua
    Zhong, Zhiguo
    Lu, Cheng
    Lv, Linxia
    Wang, Xinchang
    Zhang, Binglin
    [J]. PHYSICA B-CONDENSED MATTER, 2011, 406 (05) : 1049 - 1052
  • [35] Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering
    Jun, Min-Chul
    Koh, Jung-Hyuk
    [J]. NANOSCALE RESEARCH LETTERS, 2012, 7
  • [36] Effects of NIR annealing on the characteristics of al-doped ZnO thin films prepared by RF sputtering
    Min-Chul Jun
    Jung-Hyuk Koh
    [J]. Nanoscale Research Letters, 7
  • [37] ZnO:Ga nanowires with low turn-on field for field-emission lighting
    Yang, Sun-Hua
    Tsai, Ming-Wei
    Lin, Jau-Wen
    Chiang, Po-Jui
    [J]. APPLIED SURFACE SCIENCE, 2015, 356 : 48 - 53
  • [38] Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped ZnO Nanowires
    Ahmad, Mashkoor
    Sun, Hongyu
    Zhu, Jing
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (04) : 1299 - 1305
  • [39] Field emission properties of Al-doped ZnO nanosheet based on field emitter device with UV exposure
    Young, Sheng-Joue
    Liu, Yi-Hsing
    [J]. RSC ADVANCES, 2017, 7 (23): : 14219 - 14223
  • [40] Thermoelectric characteristics of glass fibers coated with ZnO and Al-doped ZnO
    Park, Yoonbeom
    Cho, Kyoungah
    Kim, Sangsig
    [J]. MATERIALS RESEARCH BULLETIN, 2017, 96 : 246 - 249
12345