Resonant excitation of microwave acoustic modes in n-GaAs film

被引:0
|
作者
Grimalsky, V [1 ]
Gutierrez-D, E
Garcia-B, A
Koshevaya, S
机构
[1] INAOE, Dept Elect, Puebla 72000, Mexico
[2] Autonomous Univ Morelos, CIICAp, Cuernavaca 62210, Morelos, Mexico
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Resonant excitation of coupled space charge - acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the,first and the second harmonic of input microwave signal has been demonstrated.
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页码:72 / 75
页数:4
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