New structures for carrier-controlled ferromagnetism in Cd1-xMnxTe quantum wells

被引：3
|
作者：
Bertolini, M [1 ]
Maslana, W [1 ]
Boukari, H [1 ]
Gilles, B [1 ]
Cibert, J [1 ]
Ferrand, D [1 ]
Tatarenko, S [1 ]
Kossacki, P [1 ]
Gaj, JA [1 ]
机构：
[1] CEA Grenobel, DRFM SP2M PSC, F-38054 Grenoble 9, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
molecular beam epitaxy; quantum wells; magnetic materials; semiconducting II-VI materials;
D O I：
10.1016/S0022-0248(02)02365-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
New structures aiming at controlling ferromagnetic properties of diluted magnetic semiconductors quantum wells (QWs) are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting distance between QW and surface. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：342 / 346
页数：5
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