Control of ferromagnetism in Cd1-xMnxTe quantum wells

被引：0
|
作者：
Tatarenko, S
Bertolini, M
Maslana, W
Boukari, H
Gilles, B
Cibert, J
Ferrand, D
Kossacki, P
Gaj, JA
机构：
[1] CEA, CNRS, UJF Grenoblegrp Nanophys & Semicond, Spectrometrie Phys Lab, F-38402 St Martin Dheres, France
[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[3] Ecole Natl Super Electrochim & Electrome Grenoble, Thermodynam & Physicochim Met Lab, CNRS, F-38402 St Martin Dheres, France
来源：
OPTO-ELECTRONICS REVIEW | 2003年 / 11卷 / 02期
关键词：
molecular beam epitaxy; quantum wells; magnetic materials; semiconducting II-VI materials;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New structures aiming at controlling ferromagnetic properties of diluted magnetic semiconductors quantum wells are presented. The carrier density is monitored by applying voltage in p-i-n diode or adjusting a distance between quantum well and surface. Surface doping was successfully applied to obtain samples with CdMnTe quantum well with up to 9.3% Mn concentration.
引用
收藏
页码：133 / 138
页数：6
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