Stress in copper films for interconnects

被引：6

作者：

Riedel, S ^{[1
]}

Rober, J ^{[1
]}

Schulz, SE ^{[1
]}

Gessner, T ^{[1
]}

机构：

[1] Tech Univ Chemnitz Zwickau, Zentrum Mikrotechnol, D-09107 Chemnitz, Germany

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 37-8卷 / 1-4期

关键词：

copper; stress;

D O I：

10.1016/S0167-9317(97)00106-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress was measured in blanket CVD copper films. Tensile stress was detected to be in the range from 200 MPa to 300 MPa. Temperature dependent measurements were carried out to determine thermal stress. It was found to be the major cause of the measured stress. Furthermore multiple measurements were done after deposition to observe the relaxation behaviour. The initial value and the relaxation depends on the underlayer.

引用

页码：151 / 156

页数：6

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