Stress-induced electromigration backflow effect in copper interconnects.

被引：18
|
作者：
Ney, David [1 ]
Federspiel, Xavier
Girault, Valerie
Thomas, Olivier
Gergaud, Patrice
机构：
[1] STMicroelect, Cent R&D Lab, F-39826 Crolles, France
[2] Philips Semicond, Cent R&D Lab, F-38926 Crolles, France
[3] Univ Paul Cezanne, Marseille, France
[4] CEA, LETI, MINATEC, F-38054 Grenoble 9, France
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2006年 / 6卷 / 02期
关键词：
Black's model; Blech effect; copper; electromigration (EM); interconnect; lifetime extrapolation; threshold product;
D O I：
10.1109/TDMR.2006.877862
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electromigration threshold in copper interconnect is reported in this paper. The critical product (jL)(c) is first determined for copper oxide interconnects with temperature ranging from 250 degrees C to 350 degrees C from package-level experiments. It is shown that the product does not significantly change in this temperature range. Then, (jL)(c) was extracted for copper low-k dielectric (k = 2.8) interconnects at 350 degrees C. A larger value than that for oxide dielectric was found. Finally, a correlation between the n values from Black's model and with jL conditions was established for both dielectrics.
引用
收藏
页码：175 / 180
页数：6
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