Suppression of stress-induced voiding in copper interconnects

被引：0

作者：

Oshima, T ^{[1
]}

Hinode, K ^{[1
]}

Yamaguchi, H ^{[1
]}

Aoki, H ^{[1
]}

Torii, K ^{[1
]}

Saito, T ^{[1
]}

Ishikawa, K ^{[1
]}

Noguchi, J ^{[1
]}

Fukui, M ^{[1
]}

Nakamura, T ^{[1
]}

Uno, S ^{[1
]}

Tsugane, K ^{[1
]}

Murata, J ^{[1
]}

Kikushima, K ^{[1
]}

Sekisaka, H ^{[1
]}

Murakami, E ^{[1
]}

Okuyama, K ^{[1
]}

Iwasaki, T ^{[1
]}

机构：

[1] Hitachi Ltd, Device Dev Ctr, Ome, Tokyo 1988512, Japan

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We studied stress-induced voiding in Cu interconnects in the temperature range below 250degrees C, and found two different voiding modes. One mode occurs inside a via having wide wire above it, and can be suppressed by optimizing the via shape and the via-cleaning process. The other mode occurs under a via having wide wire below it and can be suppressed by increasing the Cu grain size and improving the adhesion of the barrier metal with Cu.

引用

页码：757 / 760

页数：4

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